Plenary Speakers:

Hiroshi Amano (Nagoya University, Japan)

Breaking the insulating barrier in high-Al-content AlGaN

Edward Yi Chang (National Yang Ming Chiao Tung University, Taiwan)

E-mode GaN HEMT with ferroelectric gate material for EV and PV applications

Russell Dupuis (Georgia Institute of Technology, USA)

II–V semiconductor devices grown by metalorganic chemical vapor deposition— The development of the Swiss army knife for semiconductor epitaxial growth

Bernard Gil (CNRS- University of Montpellier, France)

The optical properties of various polytypes of sp₂-bonded Boron Nitride

Åsa Haglund (Chalmers University, Sweden)

Surface-emitting lasers in the UV-B and UV-C

Xiuling Li (University of Texas at Austin, USA)

Ga₂O₃ for next-generation power electronics: From epitaxy to devices

Matteo Meneghini (University of Padova, Italy)

Degradation Physics of UV LEDs: From experimental data to models