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Plenary Speakers:


Hiroshi Amano (Nagoya University, Japan)

Breaking the insulating barrier in high-Al-content AlGaN


Edward Yi Chang (National Yang Ming Chiao Tung University, Taiwan)

E-mode GaN HEMT with ferroelectric gate material for EV and PV applications


Russell Dupuis (Georgia Institute of Technology, USA)

II–V semiconductor devices grown by metalorganic chemical vapor deposition— The development of the Swiss army knife for semiconductor epitaxial growth


Bernard Gil (CNRS- University of Montpellier, France)

The optical properties of various polytypes of sp2-bonded Boron Nitride


Åsa Haglund (Chalmers University, Sweden)

Surface-emitting lasers in the UV-B and UV-C


Xiuling Li (University of Texas at Austin, USA)

Ga2O3 for next-generation power electronics: From epitaxy to devices


Matteo Meneghini (University of Padova, Italy)

Degradation Physics of UV LEDs: From experimental data to models